SEU reliability analysis of advanced deep-submicron transistors
نویسندگان
چکیده
منابع مشابه
SEU Reliability Improvement Due to Source-Side Charge Collection in the Deep-Submicron SRAM Cell
The effect of technology scaling (0.5–0.09 m) on single event upset (SEU) phenomena is investigated using full two-dimensional device simulation. The SEU reliability parameters, such as critical charge ( crit), feedback time ( fd) and linear energy transfer (LET), are estimated. For 0 18 m, the source node collects a significant fraction of radiation-induced charge resulting in an increase of L...
متن کاملGate Engineering for Deep-Submicron CMOS Transistors
Gate depletion and boron penetration through thin gate oxide place directly opposing requirements on the gate engineering for advanced MOSFET’s. In this paper, several important issues of deep-submicron CMOS transistor gate engineering are discussed. First, the impact of gate nitrogen implantation on the performance and reliability of deep-submicron CMOSFET’s is investigated. The suppression of...
متن کاملAdvanced Gate Technologies for Deep-Submicron CMOSFETs
Advanced Gate Technologies for Deep-Submicron CMOSFETs
متن کاملPhysically-Based Matching Model for Deep-submicron MOS Transistors
This paper presents a new physically-based deepsubmicron MOS transistors matching model that eliminates the large discrepancy between measured matching parameters and the values computed with the existing matching models. Previously neglected effects specific to the deep-submicron MOSFETs with highly doped channel and ultra-thin gate such as channel and gate random dopant fluctuation, gate depl...
متن کامل*-* Dual-Metal Gate Technology for Deep-Submicron CMOS Transistors
Dual-metal gate CMOS devices with rapid-thermal chemicalvapor deposited (RTCVD) Si3N4 gate dielectric were fabricated using a self-aligned process. The gate electrodes are Ti and MO for the Nand PMOSFET respectively. Carrier mobilities are comparable to that predicted by the universal mobility model for Si02. C-V characteristics show good agreement with a simulation that takes quantum-mechanica...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Transactions on Device and Materials Reliability
سال: 2005
ISSN: 1530-4388,1558-2574
DOI: 10.1109/tdmr.2005.848325